PART |
Description |
Maker |
TIM1414-2-252 |
HIGH POWER P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
TIM1414-7-252 |
HIGH POWER P1dB=38.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
BGA318 Q62702-G0043 |
From old datasheet system Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 硅双极单片放大器(级0瓦,增益模块十六分贝典型增益.0 GHz2 dBm典型的P - 1dB的在1.0千兆赫) Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
TM120-155-06-32 |
12 - 15.5 GHz 32 dBm Power Module
|
Transcom, Inc.
|
CFH2162-P3 |
1.8 to 2.0 GHz 36 dBm Power GaAs FET
|
Mimix Broadband
|
CFK2162-P3-000T CFK2162-P3 |
1.8 to 2.0 GHz 34 dBm Power GaAs FET
|
http:// List of Unclassifed Manufacturers ETC[ETC]
|
CMM1333-AK-00S0 CMM1333-AK-00ST CMM1333-AK-00T0 CM |
1.85 to 1.91 GHz, 5 V, 31 dBm PCS/PCN power amplifier
|
CELERITEK
|
MGA-83563-BLK MGA-83563-TR1 MGA83563 MGA83563BLK M |
22 dBm PSAT 3V Power Amplifier for 0.5 6 GHz Applications 22 dBm PSAT 3V Power Amplifier for 0.5? 6 GHz Applications 22 dBm PSAT 3V Power Amplifier for 0.5-6 GHz Applications
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
PE-W19B001 |
WR-19 Instrumentation Grade Waveguide E-Bend with UG383-U-Mod Flange Operating from 40 GHz to 60 GHz
|
Pasternack Enterprises,...
|
PE15A1005 |
40 dB Gain, 1.5 dB NF, 15 dBm, 1.2 GHz to 1.4 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
TM040-060-10-37 |
4 ~ 6 GHz 37 dBm Module
|
Transcom, Inc.
|